This article is cited in 20 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Photosensitive thin-film In/$p$-Pb$_x$Sn$_{1-x}$S Schottky barriers: Fabrication and properties

V. F. Gremenok^a, V. Yu. Rud'^b, Yu. V. Rud'^c, S. A. Bashkirov^a, V. A. Ivanov<sup>a

a</sup> Scientific-Practical Materials Research Centre of NAS of Belarus
^b St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg

Abstract: Thin Pb$_x$Sn$_{1-x}$S films are obtained by the “hot-wall” method at substrate temperatures of 210–330$^\circ$C. The microstructure, composition, morphology, and electrical characteristics of films are investigated. On the basis of the obtained films, photosensitive In/$p$-Pb$_x$Sn$_{1-x}$S Schottky barriers are fabricated for the first time. The photosensivity spectra of these structures are investigated, and the character of interband transitions and the band-gap values are determined from them. The conclusion is drawn that Pb$_x$Sn$_{1-x}$S thin polycrystalline films may be used in solar-energy converters.

Received: 12.01.2011
Accepted: 21.01.2011

 English version: Semiconductors, 2011, 45:8, 1053–1058

Bibliographic databases:

•