Semiconductor structures, low-dimensional systems, quantum phenomena

Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties

A. O. Golubok^ab, Yu. B. Samsonenko^acd, I. S. Mukhin^bc, A. D. Bouravlev^dc, G. È. Cirlin<sup>acd

a</sup> Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^d Ioffe Institute, St. Petersburg

Abstract: A method for the formation of single GaAs semiconductor nanowhiskers and their assemblies on the tip of a chemically etched tungsten needle by molecular-beam epitaxy is proposed. The focused-ionbeam technique was used to separate a single nanowhisker. Electronic properties of single nanowhiskers were studied by elastic tunneling spectroscopy in ultrahigh vacuum. The band gap and the doping level of GaAs whiskers were determined using the current-voltage characteristics obtained from these measurements.

Received: 12.01.2011
Accepted: 14.01.2011

 English version: Semiconductors, 2011, 45:8, 1049–1052

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