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Surface, interfaces, thin films

Study of the influence of the sulfide and ultraviolet treatment of the $n$–$i$-GaAs surface on the parameters of ohmic contacts

S. M. Avdeev^a, E. V. Erofeev^b, V. A. Kagadei<sup>c

a</sup> Institute of High Current Electronics, Siberian Branch of the Russian Academy of Sciences, Tomsk
^b "Mikran" Research and Production Company, Tomsk
^c Submicron Technologies LTD, Tomsk, 634055, Russia

Abstract: The possibility of improving the parameters of AuGe/Ni- and Ge/Cu-based ohmic contacts to $n$–$i$-GaAs by modifying the preliminarily oxidized GaAs surface in a sulfide-containing solution, as well as via the effect of ultraviolet radiation generated with a KrCl excimer lamp on a chalcogenated surface, is studied. It is shown that preliminary oxidation of the $n$–$i$-GaAs surface with subsequent chalcogenation makes it possible to decrease the density of the surface states, to increase the reproducibility of the passivation of the surface, and to decrease the reduced contact resistance of the AuGe/Ni ohmic contacts by a factor of 1.5. The treatment of the chalcogenated surface of $n$–$i$-GaAs with an ultraviolet radiation with wavelength $\lambda$ = 222 nm and emission power density $W$ = 12 mW cm$^{-2}$ performed in vacuum before the deposition of metal layers of the Ge/Cu ohmic contacts makes it possible to decrease the reduced contact resistance by 25–50% andimprove the morphological characteristics of the surface of the contact area.

Received: 13.01.2011
Accepted: 21.01.2011

 English version: Semiconductors, 2011, 45:8, 1026–1031

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