This article is cited in 2 papers

Spectroscopy, interaction with radiation

Photoluminescence in silicon implanted with erbium ions at an elevated temperature

N. A. Sobolev^a, A. E. Kalyadin^a, E. I. Shek^a, V. I. Sakharov^a, I. T. Serenkov^a, V. I. Vdovin^b, E. O. Parshin^c, M. I. Makoviichuk<sup>c

a</sup> Ioffe Institute, St. Petersburg
^b V. A. Fock Institute of Physics, Saint-Petersburg State University
^c Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences

Abstract: Photoluminescence spectra of $n$-type silicon upon implantation with erbium ions at 600$^\circ$C and oxygen ions at room temperature and subsequent annealings at 1100$^\circ$C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated by lines of the Er$^{3+}$ ion or dislocation-related luminescence. The short-wavelength shift of the dislocation-related luminescence line observed at this temperature is due to implantation of erbium ions at an elevated temperature. At room temperature, lines of erbium and dislocation-related luminescence are observed in the spectra, but lines of near-band-edge luminescence predominate.

Received: 30.12.2010
Accepted: 14.01.2011

 English version: Semiconductors, 2011, 45:8, 1006–1008

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