This article is cited in 6 papers

Electronic properties of semiconductors

Study of optical parameters of the Se–As chalcogenide semiconductor system containing EuF$_3$ impurities

A. I. Isayev, S. I. Mekhtieva, S. N. Garibova, R. I. Alekperov, V. Z. Zeynalov

Institute of Physics Azerbaijan Academy of Sciences

Abstract: Optical properties of chalcogenide vitreous semiconductors of composition Se$_{95}$As$_5$ containing different amounts of rare-earth metal fluorides (EuF$_3$) are studied, and, on this basis, the fundamental parameters, such as the refractive index and extinction coefficient, are determined. The dependences of these parameters on the content of EuF$_3$ molecules are nonmonotonic: the low content (below 0.25 at%) aids in decreasing the parameters, whereas the high content tends to increase them. From the analysis of the results with consideration for the structural features of chalcogenide vitreous semiconductors of the Se$_{95}$As$_5$ system (the presence of ordered high-coordinated microregions separated from each other by regions with a lower atomic density), it is concluded that the optical properties of the chalcogenide vitreous semiconductor system under study can be described in the context of Penn’s model.

Received: 26.01.2011
Accepted: 31.01.2011

 English version: Semiconductors, 2011, 45:8, 993–997

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