This article is cited in 9 papers

Electronic properties of semiconductors

Superionic conductivity in TlGaTe$_2$ crystals

R. M. Sardarly^a, O. A. Samedov^a, A. P. Abdullayev^a, E. K. Huseynov^b, E. M. Gojayev^b, F. T. Salmanov<sup>a

a</sup> Institute of radiation problems, ANAS
^b Institute of Physics Azerbaijan Academy of Sciences

Abstract: Temperature dependences of electrical conductivity $\sigma(T)$ and permittivity $\varepsilon(T)$ of one-dimensional (1D) TlGaTe$_2$ single crystals are investigated. At temperatures higher than 305 K, superionic conductivity of the TlGaTe$_2$ is observed and is related to diffusion of Tl$^+$ ions via vacancies in the thallium sublattice between (Ga$^{3+}$Te$_2^{-2}$)$^-$ nanochains. A relaxation character of dielectric anomalies is established, which suggests the existence of electric charges weakly bound to the crystal lattice. Upon the transition to the superionic state, relaxors in the TlGaTe$_2$ crystals are Tl$^+$ dipoles (Ga$^{3+}$Te$_2^{-2}$)$^-$ chains) that arise due to melting of the thallium sublattice and hops of Tl$^+$ ions from one localized state to another. The effect of a field-induced transition of the TlGaTe$_2$ crystal to the superionic state is detected.

Received: 12.01.2011
Accepted: 19.01.2011

 English version: Semiconductors, 2011, 45:8, 975–979

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