This article is cited in 2 papers

Semiconductor physics

Effect of AlGaAs–(AlGa)$_x$O$_y$ pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

N. V. Kryzhanovskaya^ab, S. A. Blokhin^ab, M. V. Maksimov^ab, A. M. Nadtochiy^ab, A. E. Zhukov^ab, K. V. Fedorova^a, N. N. Ledentsov^bc, V. M. Ustinov^b, N. D. Il'inskaya^b, D. Bimberg<sup>c

a</sup> St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg
^c Institut für Festkörperphysik, Technische Universität Berlin, D-10623, Berlin, Germany

Abstract: Effect of parameters of the AlGaAs–(AlGa)$_x$O$_y$ layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quantum dots on specific features of the emission spectrum at a temperature of 15 K under optical excitation has been studied. A decrease in the oxidation depth of the Al$_{0.97}$Ga$_{0.03}$As layer results in a decrease in the intensity of “whispering gallery mode” lines; simultaneously, the lasing threshold becomes higher and the Q factor is diminished by increased leakages into the substrate region.

 English version: Semiconductors, 2011, 45:7, 962–965

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