This article is cited in 8 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of localization in quantum wells and quantum wires on heavy-light hole mixing and acceptor binding energy

M.A. Semina, R. A. Suris

Ioffe Institute, St. Petersburg

Abstract: The variational method taking into account the complex valence band structure is used to study the effect of localization in quantum wells and quantum wires on the acceptor binding energy. Trial functions that make possible tracing of the transition from the bulk material to narrow quantum wells and quantum wires of small radius are constructed. The possibility of the appearance of an unsteadily varying dependence of the acceptor binding energy on the characteristic dimension of the system is shown.

Received: 20.12.2010
Accepted: 27.12.2010

 English version: Semiconductors, 2011, 45:7, 917–925

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