This article is cited in 3 papers

Surface, interfaces, thin films

Dependence of conductivity of an illuminated nonideal heterojunction on external bias

V. A. Borschak, V. A. Smyntyna, E. V. Brytavskyi, A. P. Balaban, N. P. Zatovskaya

I. I. Mechnikov Odessa National University

Abstract: The possibility of using a model of the tunnel-hopping charge transport to calculate the conductivity in the barrier region of the illuminated nonideal heterojunction is shown. The current-voltage characteristics of the heterojunction was calculated taking into account the prevalence of the tunnel-hopping transport mechanism in the barrier region and the change in the potential barrier shape upon exposure to light. It is shown that the current-voltage characteristics of such a heterojunction calculated at various illumination intensities are in good agreement with those observed experimentally.

Received: 28.12.2010
Accepted: 31.12.2010

 English version: Semiconductors, 2011, 45:7, 894–899

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