This article is cited in 6 papers

Spectroscopy, interaction with radiation

Photoluminescence of CdTe grown in conditions considerably deviating from thermodynamic equilibrium

V. S. Bagaev, Yu. V. Klevkov, S. A. Kolosov, V. S. Krivobok, E. E. Onishchenko, A. A. Shepel

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: Undoped cadmium telluride produced in different conditions of fast crystallization of the vapor phase at temperatures of 420–600$^\circ$C is studied by the low-temperature photoluminescence technique and electrical measurements. It is shown that, despite the relatively high rate of growth ($\sim$1 $\mu$m s$^{-1}$), the basic parameters of the lattice and band structure of the material are close to the corresponding parameters reported in publications for single-crystal CdTe. The conductivity type of the crystals grown in the study is controlled by hydrogen-like donors and acceptors associated with background impurities. It is found that, along with background impurities in $n$-type textures, there exist compensating acceptors with the nonstandard activation energies 48.5 $\pm$ 0.5, 98.0 $\pm$ 0.5, and 119.5 $\pm$ 0.5 meV. It is shown that the lowered temperature of growth, together with the excess tellurium content, yields a sharp increase in the concentration of deep electron states and isoelectronic defects with lowered symmetry.

Received: 28.12.2010
Accepted: 31.12.2010

 English version: Semiconductors, 2011, 45:7, 880–887

Bibliographic databases:

•