This article is cited in 20 papers

Spectroscopy, interaction with radiation

Photoluminescence of Hg$_{1-x}$Cd$_x$Te based heterostructures grown by molecular-beam epitaxy

K. J. Mynbaev^a, N. L. Bazhenov^a, V. I. Ivanov-Omskii^a, N. N. Mikhailov^b, M. V. Yakushev^b, A. V. Sorochkin^b, V. G. Remesnik^b, S. A. Dvoretskii^b, V. S. Varavin^b, Yu. G. Sidorov<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Photoluminescence (PL) of Hg$_{1-x}$Cd$_x$Te-based heterostructures grown by molecular-beam epitaxy (MBE) on GaAs and Si substrates has been studied. It is shown that a pronounced disruption of the long-range order in the crystal lattice is characteristic of structures of this kind. It is demonstrated that the observed disordering is mostly due to the nonequilibrium nature of MBE and can be partly eliminated by postgrowth thermal annealing. Low-temperature spectra of epitaxial layers and structures with wide potential wells are dominated by the recombination peak of an exciton localized in density-of-states tails; the energy of this peak is substantially lower than the energy gap. In quantum-well (QW) structures at low temperatures, the main PL peak is due to carrier recombination between QW levels and the energy of the emitted photon is strictly determined by the effective (with the QW levels taken into account) energy gap.

 English version: Semiconductors, 2011, 45:7, 872–879

Bibliographic databases:

•