This article is cited in 2 papers

Electronic properties of semiconductors

Deep electron levels in undoped polycrystalline CdTe annealed in liquid Cd

E. A. Bobrova, Yu. V. Klevkov

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The method of deep-level transient spectroscopy (DLTS) is used to determine the set of deep electron levels in undoped $n$-CdTe polycrystals grown by chemical synthesis from vapor phase in highly nonequilibrium conditions and then subjected to annealing in liquid Cd. After annealing, the electron concentration is found to increase from $\sim$10$^8$ to 10$^{15}$ cm$^{-3}$. Electron traps with deep levels $E_1$ = 0.84 $\pm$ 0.03 eV and $E_2$ = 0.71 $\pm$ 0.02 eV with total concentration $\sim$10$^{14}$ cm$^{-3}$ are dominant in the DLTS spectrum. The role of grain boundaries and intrinsic point defects in formation of deep-level centers and their effect on the value of conductivity after annealing are discussed. A relation between the level $E_1$ and complexes of intrinsic point defects and relation of the level $E_2$ to the Cd$_i$ point defect are considered.

Received: 22.12.2010
Accepted: 28.12.2010

 English version: Semiconductors, 2010, 45:7, 865–871

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