Electronic properties of semiconductors

Transient spectroscopy of Ryvkin's $\alpha$ centers

A. P. Odrinsky

Institute of Technical Acoustics, Academy of Sciences of Belarus, Vitebsk

Abstract: The features of the DLTS detection of defects with retrappability of thermally excited carriers due to a large value of effective capture cross section are considered. Indications allowing identification of the implementation of the given model are found.

Received: 22.12.2010
Accepted: 28.12.2010

 English version: Semiconductors, 2011, 45:7, 857–860

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