V. A. Romaka, P. Rogl, V. V. Romaka, E. K. Hlil, Yu. V. Stadnyk, S. M. Budgerak, “Features of a priori heavy doping of the <nobr>$n$</nobr>-TiNiSn intermetallic semiconductor”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 7,Pages <nobr>879

This article is cited in 15 papers

Electronic properties of semiconductors

Features of a priori heavy doping of the $n$-TiNiSn intermetallic semiconductor

V. A. Romaka^ab, P. Rogl^c, V. V. Romaka^b, E. K. Hlil^d, Yu. V. Stadnyk^e, S. M. Budgerak^b

^a Ya. S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics, NAS Ukraine, L'vov
^b Lviv Polytechnic National University
^c Institut für Physikalische Chemie, Universität Wien, A-1090, Vienna, Austria
^d Laboratoire de Neel, CNRS, BP 166, 38042, Grenoble, France
^e Ivan Franko National University of L'viv

Abstract: The crystal structure, the distribution of electron density, and the energy, kinetic, and magnetic properties of the $n$-TiNiSn intermetallic semiconductor are investigated. It is shown that a priori doping of $n$-TiNiSn with donors originates from partial, up to 0.5 at%, redistribution of Ti and Ni atoms in crystallographic sites of Ti atoms. The correlation is established between the donor concentration, amplitude of modulation of the continuous energy bands, and degree of filling of low-scale fluctuation potential wells with charge carriers. The results obtained are discussed within the Shklovskii-Efros model of a heavily doped and compensated semiconductor.

Received: 21.12.2010
Accepted: 28.12.2010