Manufacturing, processing, testing of materials and structures

A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “A statistical method of deep-level transient spectroscopy in semiconductors”

N. A. Yarykin

Institute of Microelectronics Technology and High-Purity Materials RAS

Received: 18.11.2010

 English version: Semiconductors, 2011, 45:6, 832–834

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