This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Fabrication of improved-quality seed crystals for growth of bulk silicon carbide

M. G. Mynbaeva^a, P. L. Abramov^a, A. A. Lebedev^a, A. S. Tregubova^a, D. P. Litvin^b, A. V. Vasilyev^b, T. Yu. Chemekova^b, Yu. N. Makarov<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Nitride Crystals Group, St.-Petersburg

Abstract: Sublimation epitaxy in a vacuum has been used to grow silicon carbide layers with a low defect concentration and with SiC wafers cut from single-crystal ingots produced by the modified Lely method serving as substrates. It is concluded on the basis of a comparative study of the distribution of structural defects in substrates and epitaxial layers that an isomorphic pair composed of an epitaxial layer and a single-crystal SiC substrate, which is a composite of materials produced by the same method (sublimation synthesis), but in different technological conditions, is promising for fabrication of improved-quality silicon carbide seed crystals.

Received: 30.11.2010
Accepted: 06.12.2010

 English version: Semiconductors, 2011, 45:6, 828–831

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