This article is cited in 2 papers

Manufacturing, processing, testing of materials and structures

Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

I. P. Sotnikov^ab, D. E. Afanasev^c, G. È. Cirlin^abd, V. A. Petrov^ab, E. M. Tanklevskaya^b, Yu. B. Samsonenko^abd, A. D. Bouravlev^ab, A. I. Khrebtov^b, V. M. Ustinov<sup>ab

a</sup> St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg
^c St. Petersburg State University, Faculty of Physics
^d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg

Abstract: The formation of ordered GaAs nanowhiskers obtained on GaAs (111)As substrates using electron-beam lithography and catalytic molecular-beam epitaxy (MBE) growth is studied experimentally. The main parameters of the e-beam lithographic process necessary for obtaining Au catalyst droplets 10–150 nm in size are determined. It is established that subsequent MBE growth proceeds predominantly by the diffusion mechanism. In the regions subjected to a repeated e-beam exposure after the lift-off process, suppression of nanowhisker growth can take place.

Received: 16.11.2010
Accepted: 22.11.2010

 English version: Semiconductors, 2011, 45:6, 822–827

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