P. N. Brunkov, A. A. Gutkin, M. È. Rudinskii, O. I. Ronzhin, A. A. Sitnikova, A. A. Shakhmin, B. Ya. Ber, D. Yu. Kazantsev, A. Yu. Egorov, V. E. Zemlyakov, S. G. Konnikov, “Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 6,Pages <nobr>829

This article is cited in 12 papers

Semiconductor physics

Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

P. N. Brunkov^a, A. A. Gutkin^a, M. È. Rudinskii^a, O. I. Ronzhin^a, A. A. Sitnikova^a, A. A. Shakhmin^a, B. Ya. Ber^a, D. Yu. Kazantsev^a, A. Yu. Egorov^b, V. E. Zemlyakov^c, S. G. Konnikov^a

^a Ioffe Institute, St. Petersburg
^b Saint Petersburg Physics and Technology Centre for Research and Education
^c Institute of Microelectronics Technology and High-Purity Materials RAS

Abstract: The depth distribution of free carriers over the HEMT structures with quantum-well layers is studied by electrochemical capacitance-voltage profiling. It is shown that the actual distribution of the concentration of free carriers and their energy spectrum in the HEMT structure channel can be obtained by numerical simulation of the results of profiling based on the self-consistent solution of one-dimensional Schrödinger and Poisson equations.

Received: 02.12.2010
Accepted: 13.12.2010