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Fizika i Tekhnika Poluprovodnikov, 2011 Volume 45, Issue 6, Pages 816–822 (Mi phts8566)

This article is cited in 10 papers

Semiconductor physics

Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells

O. Ya. Olikh

National Taras Shevchenko University of Kyiv

Abstract: The results of an experimental study of silicon solar cells operating under conditions of dynamic ultrasonic loading are presented. Based on an analysis of current-voltage characteristics, the dependences of the short-circuit current, open-circuit voltage, maximum output power, shunt resistance, reverse current, and breakdown voltage on the strain caused by acoustic waves of various frequencies are studied. Possible mechanisms of the acoustic effect are analyzed. In particular, acoustically induced transformation of recombination centers (e.g., B$_S$O$_{2i}$ complexes) and ionization of levels associated with extended defects in the $p$$n$ junction region are considered.

Received: 11.11.2010
Accepted: 23.11.2010


 English version:
Semiconductors, 2011, 45:6, 798–804

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