This article is cited in 3 papers

Amorphous, glassy, organic semiconductors

Impurity centers of tin in glassy arsenic chalcogenides

G. A. Bordovskii^a, A. Yu. Dashina^a, A. V. Marchenko^a, P. P. Seregin^a, E. I. Terukov<sup>b

a</sup> Herzen State Pedagogical University of Russia, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: $^{119}$Sn atoms produced by radioactive decay of $^{119}$Sb impurity atoms in the structure of As$_x$S$_{1-x}$ and As$_x$Se$_{1-x}$ glasses are stabilized in the form of Sn$^{2+}$ and Sn$^{4+}$ ions at arsenic sites and correspond to ionized states of the amphoteric two-electron center with negative correlation energy (Sn$^{2+}$ is an ionized acceptor, and Sn$^{4+}$ is an ionized donor), whereas the neutral state of the Sn$^{3+}$ center is unstable. The fraction of Sn$^{4+}$ states increases with chalcogen content in glass. $^{119}$Sn atoms produced by radioactive decay of $^{119m}$Te impurity atoms in the structure of As$_x$S$_{1-x}$ and As$_x$Se$_{1-x}$ glasses are stabilized at chalcogen sites (they are electrically inactive) and arsenic sites, and the fraction of arsenic atoms decreases with the chalcogen content in glass.

Received: 22.11.2010
Accepted: 29.11.2010

 English version: Semiconductors, 2011, 45:6, 783–787

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