This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys

K. D. Moiseev^a, V. P. Lesnikov^b, V. V. Podol'skii^b, Yu. Kudriavtsev^c, O. Koudriavtseva^c, A. Escobosa^c, V. Sanchez-Resendiz<sup>c

a</sup> Ioffe Institute, St. Petersburg
^b Lobachevsky State University of Nizhny Novgorod
^c CINVESTAV-IPN, 07360 Mexico D.F., P.O. box 14-740 Mexico

Abstract: Nanotechnology of obtainment of diluted magnetic semiconductors based on the GaInAsSb compounds is developed using the laser deposition of Mn atoms on the surface of the epitaxial layer of a quaternary alloy obtained by liquid-phase epitaxy. Fabricated heterostructures were studied using high-resolution X-ray diffraction for the Bragg and grazing diffraction geometries, and the layer-by-layer analysis is performed by secondary-ion mass spectrometry. It is established that the near-boundary region of the Ga$_{0.96}$In$_{0.04}$As$_{0.11}$Sb$_{0.89}$ layer near the deposition surface of atomic Mn exhibits the presence of a quinary compound with Mn atoms in the lattice and Mn$_3$As$_2$-type binary inclusions. Saturation of the GaIn(Mn)AsSb multicomponent diluted semiconductor with the Mn compounds makes it possible to specify the concentration of the magnetic impurity in the crystal and control the magnetic properties of the heterostructure.

Received: 06.12.2010
Accepted: 13.12.2010

 English version: Semiconductors, 2011, 45:6, 771–775

Bibliographic databases:

•