This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures

V. P. Klad'ko^a, A. V. Kuchuk^a, N. V. Safryuk^a, V. F. Machulin^a, A. E. Belyaev^a, R. V. Konakova^a, B. S. Yavich^b, B. Ya. Ber^c, D. Yu. Kazantsev<sup>c

a</sup> Institute of Semiconductor Physics NAS, Kiev
^b Svetlana Optoelectronics ZAO, St. Petersburg
^c Ioffe Institute, St. Petersburg

Abstract: The methods of high-resolution X-ray diffraction have been used to study the multilayered structures in an In$_x$Ga$_{1-x}$ N/GaN system grown by the method of metal-organic chemical-vapor deposition. A correlation between the strain state (relaxation) of the system, the indium content within quantum wells, the ratio of the barrier/well thicknesses, and the number of quantum wells in the active superlattice is established. It is shown that partial relaxation is observed even in a structure with one quantum well. The results we obtained indicate that the relaxation processes are bound to appreciably affect the optical characteristics of devices.

Received: 11.11.2010
Accepted: 23.11.2010

 English version: Semiconductors, 2011, 45:6, 753–760

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