This article is cited in 11 papers

Manufacturing, processing, testing of materials and structures

Fabrication of por-Si/SnO$_x$ nanocomposite layers for gas microsensors and nanosensors

V. V. Bolotov, P. M. Korusenko, S. N. Nesov, S. N. Povoroznyuk, V. E. Roslikov, E. A. Kurdyukova, Yu. A. Sten'kin, R. V. Shelyagin, E. V. Knyazev, V. E. Kan, I. V. Ponomareva

Omsk Branch, Institute for Semiconductor Physics, Siberian Branch, RAS

Abstract: Two-phase nanocomposite layers based on porous silicon and nonstoichiometric tin oxide were fabricated by various methods. The structure, as well as elemental and phase composition, of the obtained nanocomposites were studied using transmission and scanning electron microscopy, Raman spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. The results obtained confirm the formation of nanocomposite layers with a thickness as large as 2 $\mu$m thick and SnO$_x$ stoichiometry coefficients $x$ = 1.0–2.0. Significant tin diffusion into the porous silicon matrix with $D_{\mathrm{eff}}\approx$ 10$^{-14}$ cm$^2$ s$^{-1}$ was observed upon annealing at 770 K. Test sensor structures based on por-Si/SnO$_x$ nanocomposite layers grown by magnetron deposition showed fairly high stability of properties and sensitivity to NO$_2$.

 English version: Semiconductors, 2011, 45:5, 693–698

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