This article is cited in 5 papers

Semiconductor physics

Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions

A. M. Nadtochiy^ab, S. A. Blokhin^ab, A. Mutig^c, J. Lott^d, N. N. Ledentsov^ad, L. Ya. Karachinsky^ab, M. V. Maksimov^ab, V. M. Ustinov^a, D. Bimberg<sup>c

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^c Institut für Festkörperphysik, Technische Universität Berlin, PW 5-2, D-10623 Berlin, Germany
^d VI Systems GmbH, 10623 Berlin, Germany

Abstract: It has been shown that the use of submonolayer InAs insertions as an active region of AlGaAs vertical cavity surface emitting lasers make it possible to attain resonant frequencies as high as 17 GHz. In this case, single-mode devices with a smaller diameter of the current aperture make it possible to attain higher frequencies at lower current densities than those of multimode devices with a larger aperture diameter. The maximum error-free data transmission rate in the direct modulation mode in NRZ format is 20 Gb/s and is limited by the parasitic cutoff frequency. The high resonant frequency suggests that further optimization of the device design, directed to decreasing the electrical capacitance and resistances, the data transmission rate in lasers based on submonolayer insertions can be increased to 40 Gb/s.

Received: 09.11.2010
Accepted: 15.11.2010

 English version: Semiconductors, 2011, 45:5, 679–684

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