V. Ya. Aleshkin, T. S. Babushkina, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, S. M. Nekorkin, “Simultaneous TE$_1$ and TE$_2$ mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 5,Pages 652

This article is cited in 3 papers

Semiconductor physics

Simultaneous TE$_1$ and TE$_2$ mode lasing yielding dual-wavelength oscillation in a semiconductor laser with a tunnel junction

V. Ya. Aleshkin^a, T. S. Babushkina^b, A. A. Biryukov^b, A. A. Dubinov^a, B. N. Zvonkov^b, M. N. Kolesnikov^b, S. M. Nekorkin^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: Dual-frequency oscillation is obtained and investigated in a new type of injection heterolaser, an interband two-stage cascade laser with a tunneling $p$–$n$ junction separating two active regions with quantum wells located in a common waveguide. The laser design provides for simultaneous oscillation at the first-order TE mode of wavelength $\lambda$ = 1.086 $\mu$m and the second-order TE mode of wavelength $\lambda$ = 0.96 $\mu$m in the continuous-wave regime at room temperature.

Received: 14.10.2010
Accepted: 22.10.2010