This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Photosensitive structures based on CuIn$_5$Te$_8$ single crystals: Development and properties

I. V. Bondar'^a, V. Yu. Rud'^b, Yu. V. Rud'^c, E. I. Terukov^c, A. M. Kovalchuk<sup>a

a</sup> Belarussian State University of Computer Science and Radioelectronic Engineering
^b Peter the Great St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg

Abstract: A new ternary compound is synthesized for the first time, and bulk CuIn$_5$Te$_8$ single crystals are grown by directed crystallization of near-stoichiometric melt. It is established from X-ray diffraction patterns of grown crystals that they exhibit the structure of imperfect chalcopyrite with parameters of the unit cell of CuIn$_5$Te$_8$, which were close to those known for the CuInTe$_2$ ternary compound with the composition index $n$ = 0. First, photosensitive structures are fabricated based on CuIn$_5$Te$_8$ crystals, and photosensitivity spectra are obtained for them; it is shown that it is possible to achieve broadband photosensitivity under illumination of the barrier side of these crystals. From the analysis of photosensitivity spectra, the character of band-to-band transitions and corresponding energies of these transitions in CuIn$_5$Te$_8$ are determined. This opens up prospects to use this new semiconductor in photoconverters of solar radiation.

Received: 13.11.2010
Accepted: 19.11.2010

 English version: Semiconductors, 2011, 45:5, 607–610

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