This article is cited in 7 papers

Surface, interfaces, thin films

The effect of a magnetic field on electrical properties of surface-barrier Bi–Si–Al structures

B. V. Pavlyk, A. S. Grypa, D. P. Slobodzyan, R. M. Lys, J. A. Shykorjak, R. I. Didyk

Ivan Franko National University of L'viv

Abstract: The effects of reconstruction of structural defects at the semiconductor-metal interface caused by a magnetic field are detected. The analysis of the current-voltage and capacitance-voltage characteristics is indicative of a magnetically stimulated increase in the positive charge of the dielectric layer and also a change in the density of surface states depending on the degree of doping of semiconductors under investigation.

Received: 30.11.2009
Accepted: 01.11.2010

 English version: Semiconductors, 2011, 45:5, 599–602

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