Abstract:$n$-Si single crystals produced by the floating zone method are studied. The concentration of electrons in the crystals is 6 $\times$ 10$^{13}$ cm$^{-3}$. The samples are irradiated with 25-MeV protons at 300 K. The irradiation dose is varied in the range (1.8–8.1) $\times$ 10$^{12}$ cm$^{-2}$. The measurements are carried out by means of the Hall technique in the range of temperatures $T$ = 77–300 K. In samples irradiated with different proton doses, a sharp increase in the experimental effective Hall mobility $\mu_{\mathrm{eff}}$ or a deep minimum in the dependence $\mu_{\mathrm{eff}}(T)$ in the region of phonon scattering of electrons is observed immediately after irradiation or after aging of the samples, respectively. The observed effect is attributed to the formation of high-conductivity (metal-like) inclusions in the irradiated samples and to changes in the degree of screening of the inclusions by impurity-defect shells in relation to the irradiation dose, the time of natural aging, and the temperature of measurements. The impurity-defect shells are formed around metal-like inclusions during isochronal annealing or natural aging of the irradiated samples. It is suggested that metal-like inclusions formed in the $n$-Si crystals on irradiation with protons with the energy 25 MeV are atomic nanoclusters with an 80-nm radius.
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