A. V. Savel'ev, I. I. Novikov, A. V. Chunareva, N. Yu. Gordeev, M. V. Maksimov, A. S. Payusov, E. M. Arakcheeva, V. A. Shchukin, N. N. Ledentsov, “A temperature-stable semiconductor laser based on coupled waveguides”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 4,Pages <nobr>560

This article is cited in 2 papers

Semiconductor physics

A temperature-stable semiconductor laser based on coupled waveguides

A. V. Savel'ev^ab, I. I. Novikov^ac, A. V. Chunareva^ac, N. Yu. Gordeev^ac, M. V. Maksimov^ac, A. S. Payusov^a, E. M. Arakcheeva^ac, V. A. Shchukin^c, N. N. Ledentsov^ad

^a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Peter the Great St. Petersburg Polytechnic University
^c Ioffe Institute, St. Petersburg
^d VI Systems GmbH, 10623 Berlin, Germany

Abstract: The design of a stripe semiconductor laser with a composite waveguide formed of two tunneling-coupled waveguides, one of which is narrow and contains the active medium and the other of which is wide and forms the optical mode is considered. It is shown that temperature stabilization of the lasing wavelength can be attained with such a semiconductor laser design. Stabilization of the wavelength can be brought about by lasing in antiresonance conditions of coupling of two waveguides; these conditions arise in a narrow range of wavelengths that depends on temperature only slightly. Calculations performed at the parameters characteristic of the InAlGaAsP laser system show that it is possible to reduce the temperature dependence of the lasing wavelength by a factor of 3 in the temperature range with the width of 60 K.

Received: 11.10.2010
Accepted: 22.10.2010