This article is cited in 10 papers

Semiconductor physics

Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

N. V. Zotova, S. A. Karandashov, B. A. Matveev, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus

Ioffe Institute, St. Petersburg

Abstract: Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the $N$-InAsSbP/$n$-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.

Received: 19.10.2010
Accepted: 22.10.2010

 English version: Semiconductors, 2011, 45:4, 543–549

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