This article is cited in 3 papers

Semiconductor physics

Potential distribution in voltage terminating structures with floating $p$–$n$ junction rings of silicon radiation detectors

E. M. Verbitskaya^a, V. K. Eremin^a, N. N. Safonova^a, I. V. Eremin^a, Yu. V. Tuboltsev^a, S. A. Golubkov^b, K. A. Kon'kov<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Research Institute of Materials Science and Technology, Zelenograd

Abstract: A model of the potential distribution in voltage terminating structures (VTSs) with floating $p^+$–$n$ junction rings in silicon radiation detectors is proposed. The model is based on experimental current-voltage characteristic of interring gaps, measured for detectors based on high-resistivity silicon with resistivities from 1 to 25 k$\Omega$ cm. The physical basis of the model is the injection principle of current flow through VTS interring gaps, which becomes possible at a certain electric field distribution in space charge regions of $p^+$–$n$ junctions of the sensitive contact and rings. It is shown that the injection current flow is a universal operation principle of the VTS with floating rings, which leads to rigid stabilization of potentials of individual rings. As a result, it becomes possible to divide the potential irrespective of the semiconductor material resistivity.

Received: 11.10.2010
Accepted: 22.10.2010

 English version: Semiconductors, 2011, 45:4, 536–542

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