This article is cited in 11 papers

Semiconductor physics

Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability

A. E. Zhukov^a, N. V. Kryzhanovskaya^a, M. V. Maksimov^a, A. Yu. Egorov^a, M. M. Pavlov^a, F. I. Zubov^a, L. V. Asryan<sup>b

a</sup> St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA

Abstract: A method for enhancing the temperature stability of injection lasers that is based on introducing asymmetric barrier layers on each side of the quantum-confined active region is suggested. The asymmetric barrier layers prevent electrons from escaping from the active region into the part of the waveguide region where holes are injected and prevent holes from escaping into the part of the waveguide region where electrons are injected. Parameters of the layers that allow implementation of the asymmetric-barrier design using pseudomorphic structures grown on GaAs substrates are determined. The calculation of the threshold characteristics of these laser structures demonstrates that suppression of electron-hole recombination outside the active region attained due to the use of asymmetric barrier layers leads to a significant decrease in the threshold current and an increase in the characteristic temperature of this type of lasers.

Received: 06.10.2010
Accepted: 22.10.2010

 English version: Semiconductors, 2011, 45:4, 530–535

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