Impact of the sample thickness and $\gamma$-irradiation dose on the occurrence of radiation-induced optical effects in chalcogenide vitreous semiconductors of the Ge–Sb–S system
Abstract:
The impact of the sample thickness and $\gamma$-irradiation dose on the magnitude of total and static radiation-induced optical effects in chalcogenide vitreous semiconductors is studied using the example of Ge–Sb–S alloys of the Ge$_{23.5}$Sb$_{11.8}$S$_{64.7}$ chemical composition. It is established that, at comparable ratios between the doses of $\gamma$-irradiation ($\Phi$ = 3.0 and 7.72 MGy) and thicknesses of the samples ($d$ = 1.0 and 1.7 mm), the dose change more essentially affects the occurrence of radiation-induced optical effects in the semiconductors examined.
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