This article is cited in 23 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al$_x$Ga$_{1-x}$As (100) heterostructures

P. V. Seredin^a, A. V. Glotov^a, V. E. Ternovaya^a, È. P. Domashevskaya^a, I. N. Arsent'ev^b, D. A. Vinokurov^b, A. L. Stankevich^b, I. S. Tarasov

^a Voronezh State University
^b Ioffe Institute, St. Petersburg

Abstract: The X-ray diffraction and infrared spectroscopy data for MOCVD-hydride Al$_x$Ga$_{1-x}$As:Si/GaAs(100) heterostructures and homoepitaxial GaAs:Si/GaAs(100) structures doped with Si to a content of up to $\sim$1 at% are reported. It is shown that, in the homoepitaxial heterostructures, the formation of alloys with Si yields a decrease in the crystal lattice parameters of the epitaxial layer and a negative lattice mismatch with the single-crystal substrate ($\Delta a<$ 0). At the same time, the formation of quaternary alloys in the Al$_x$Ga$_{1-x}$As:Si/GaAs(100) heterostructures is not accompanied by any pronounced strains in the crystal lattice. By introducing Si into the epitaxial layers of these heterostructures, it is possible to attain complete matching of crystal lattice parameters of the film and substrate in the appropriately chosen technological conditions of growth of the epitaxial layers.

Received: 14.10.2010
Accepted: 22.10.2010

 English version: Semiconductors, 2011, 45:4, 481–492

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