This article is cited in
2 papers
Spectroscopy, interaction with radiation
Modification of the structural lattice parameters and electron spectra of $n$-GaAs films on sapphire on irradiation with reactor neutrons
V. N. Brudnyia,
A. V. Kosobutskyb,
N. G. Kolinc,
A. V. Korulinc a Tomsk State University
b Kemerovo State University
c Karpov Institute of Physical Chemistry, Obninsk Branch
Abstract:
Changes in the structural parameters of epitaxial GaN films on sapphire (
$n$-GaN/Al
$_2$O
$_3$(0001)) induced by irradiation with reactor neutrons with integrated fluences up to 7.25
$\times$ 10
$^{19}$ fn cm
$^{-2}$ (
$(\varphi_{\text{fn}}/\varphi_{\text{tn}}\approx$ 1) and subsequent isochronal annealing at temperatures up to 1000
$^\circ$C are studied. Measurements of the lattice parameters
$a$ and
$c$ of the irradiated
$n$-GaN films show that the parameter
$c$ increases by 0.38% and the parameter
$a$ remains almost unchanged. From theoretical estimations, it follows that, in the irradiated
$n$-GaN film, the elastic tensile stress along the
$c$ axis is as high as
$\sim$1.5 GPa, whereas the compression stress in the basal plane of the unit cell is about -0.5 GPa. The tension of the irradiated GaN film along the hexagonal axis induces a decrease in the band gap
$E_g$ by 37 meV and a lowering of the charge neutrality level by 22 meV with respect to the corresponding parameters in the initial GaN film on sapphire. The parameter c changed by irradiation with reactor neutrons by
$\Delta_c$ can be recovered by annealing in the temperature range 100–1000
$^\circ$C, with the basic stage of annealing at about 400
$^\circ$C.
Received: 21.07.2010
Accepted: 18.10.2010
Fulltext:
PDF file (271 kB)
