Electronic properties of semiconductors

Transmittance spectra of the CuGa$_3$Se$_5$ ternary compound near the fundamental absorption edge

I. V. Bondar'

Belarussian State University of Computer Science and Radioelectronic Engineering

Abstract: The CuGa$_3$Se$_5$ ternary compound films are produced by laser deposition at the substrate temperatures 480 and 580 K. The composition and structure of the films are studied. It is shown that, similarly to the corresponding crystals, the CuGa$_3$Se$_5$ films crystallize into the imperfect chalcopyrite structure. The transmittance spectra near the fundamental absorption edge are used to establish the energies and nature of optical transitions. The energies of crystal-field splitting $(\Delta_{\mathrm{cr}})$ and spin-orbit splitting $(\Delta_{\mathrm{SO}})$ of the valence band of the CuGa$_3$Se$_5$ ternary compound are calculated in the context of the Hopfield quasi-cubic model.

Received: 05.08.2010
Accepted: 14.09.2010

 English version: Semiconductors, 2011, 45:4, 445–448

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