This article is cited in 3 papers

Electronic properties of semiconductors

Minority-charge-carrier mobility at low injection level in semiconductors

L. I. Pomortseva

Russian Electrotechnical Institute Named after V. I. Lenin

Abstract: From the kinetic equations, the distribution functions for majority and minority charge carriers are obtained at a low injection level. For describing the electron-hole collisions, the Landau collision integral is used. The carrier scattering at ionized or neutral impurity and at acoustic phonons is taken into account. The majority-carrier distribution function is presented in the analytical form. The minority-carrier mobility is calculated and analyzed, and the features of its behavior at low temperatures are revealed. It follows from the developed theory that the hole mobility in an $n$-type material increases with doping and neutral-impurity concentration. This effect is attributed to mutual charge-carrier collisions and different effective masses of different-sign carriers.

Received: 19.08.2010
Accepted: 20.09.2010

 English version: Semiconductors, 2011, 45:4, 436–444

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