This article is cited in 19 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

Yu. B. Samsonenko^abc, G. È. Cirlin^abc, A. I. Khrebtov^b, A. D. Bouravlev^bc, N. K. Polyakov^abc, V. P. Ulin^c, V. G. Dubrovskii^bc, P. Werner<sup>d

a</sup> Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^c Ioffe Institute, St. Petersburg
^d Max Planck Institute of Microstructure Physics, Halle/Saale D 06120, Germany

Abstract: The processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of production of the GaAs nanowires, molecular-beam epitaxy is used. It is found that, in the range of substrate temperatures between 610 and 630$^\circ$C, the surface density of nanowires and their diameter sharply increases, whereas the temperature dependence of the nanowire length exhibits a maximum at 610$^\circ$C. An increase in the temperature to 640$^\circ$C suppresses the formation of nanowires. The method that provides a means for the fabrication of purely cubic GaAs nanowires is described. A theoretical justification of the formation of the cubic phase in self-catalyzed GaAs nanowires is presented.

Received: 19.10.2010
Accepted: 22.10.2010

 English version: Semiconductors, 2011, 45:4, 431–435

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