This article is cited in 7 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

States of antimony and tin atoms in lead chalcogenides

G. A. Bordovskii^a, S. A. Nemov^b, A. V. Marchenko^a, A. V. Zaiceva^a, M. Yu. Kozhokar^a, P. P. Seregin<sup>a

a</sup> Herzen State Pedagogical University of Russia, St. Petersburg
^b Saint-Petersburg State Polytechnical University

Abstract: It is shown by Mössbauer spectroscopy of the $^{119}$Sb($^{119m}$Sn) isotope that impurity antimony atoms in PbS, PbSe, and PbTe lattices are distributed between cation and anion sublattices. In $n$-type samples, the greatest part of antimony is located in the anion sublattice; in hole ones, in the cation sublattice. The tin atoms formed as a result of radioactive decay of $^{119}$Sb (antisite state) are electrically inactive in the anion sub-lattice of PbS and PbSe, while, in the cation sublattice, they form donor $U^-$-centers. Electron exchange between the neutral and doubly ionized tin $U^-$-centers via the allowed band states is observed. The tin atoms formed after radioactive decay of $^{119}$Sb are electrically inactive in the anion and cation sublattices of PbTe.

Received: 04.10.2010
Accepted: 22.10.2010

 English version: Semiconductors, 2011, 45:4, 427–430

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