G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. G. Kesler, V. A. Skuratov, A. G. Cherkov, “The effect of composition on the formation of light-emitting Si nanostructures in SiO<nobr>$_x$</nobr> layers on irradiation with swift heavy ions”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 3,Pages <nobr>419

This article is cited in 2 papers

Manufacturing, processing, testing of materials and structures

The effect of composition on the formation of light-emitting Si nanostructures in SiO$_x$ layers on irradiation with swift heavy ions

G. A. Kachurin^a, S. G. Cherkova^a, D. V. Marin^a, V. G. Kesler^a, V. A. Skuratov^b, A. G. Cherkov^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Joint Institute for Nuclear Research, Dubna, Moscow region

Abstract: The SiO$_x$ layers different in composition (0 $< x <$ 2) are irradiated with Xe ions with the energy 167 MeV and the dose 10$^{14}$ cm$^{-2}$ to stimulate the formation of light-emitting Si nanostructures. The irradiation gives rise to a photoluminescence band with the parameters dependent on $x$. As the Si content is increased, the photoluminescence is first enhanced, with the peak remaining arranged near the wavelength $\lambda\approx$ 600 nm, and then the peak shifts to $\lambda\approx$ 800 nm. It is concluded that the emission sources are quantum-confined nanoprecipitates formed by disproportionation of SiO$_x$ in ion tracks due to profound ionization losses. Changes in the photoluminescence spectrum with increasing $x$ are attributed firstly to the increase in the probability of formation of nanoprecipitates and then to the increase in their dimensions; the latter effect is accompanied with a shift of the emission band to longer wavelengths. The subsequent quenching of photoluminescence is interpreted as a result of the removal of quantum confinement in nanoprecipitates and their coagulation.

Received: 24.08.2010
Accepted: 30.08.2010