P. A. Borodin, A. A. Bukharaev, D. O. Filatov, M. A. Isakov, V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, “Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 3,Pages <nobr>414

This article is cited in 4 papers

Manufacturing, processing, testing of materials and structures

Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy

P. A. Borodin^a, A. A. Bukharaev^a, D. O. Filatov^b, M. A. Isakov^b, V. G. Shengurov^b, V. Yu. Chalkov^b, S. A. Denisov^b

^a Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The local density of states in self-assembled GeSi/Si(001) nanoislands is investigated for the first time by combined tunneling and atomic-force scanning microscopy. Current images and tunneling spectra of individual GeSi/Si(001) islands are obtained. These measurements yield the spatial and energy distributions of the local density of states in GeSi islands, respectively. The tunneling spectroscopy data demonstrate that uncapped Ge$_{0.3}$Si$_{0.7}$/Si(001) islands behave as type-I heterostructures.

Received: 14.07.2010
Accepted: 26.07.2010