This article is cited in 3 papers

Manufacturing, processing, testing of materials and structures

The influence of hydrogenation on the electrical properties of the Cd$_x$Hg$_{1-x}$Te epitaxial structures

V. S. Varavin, G. Yu. Sidorov, M. O. Garifullin, A. V. Vishnyakov, Yu. G. Sidorov

Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The phenomenon of hydrogenation of the Cd$_x$Hg$_{1-x}$Te films is studied. Hydrogenation was performed via either boiling the Cd$_x$Hg$_{1-x}$Te films in deionized water or using the electrochemical treatment. It is established that, during contacts with aqueous media, the acceptor centers are introduced into the films; their concentration can exceed 10$^{17}$ cm$^{-3}$. It is shown that two types of hydrogen-based acceptors are introduced, namely, fast and slow acceptors, and their diffusivities are evaluated. It is found that hydrogen partially exists after treatment in an electrically inactive form and can be activated with further storage or during heating. After activation, the hole concentration can become as high as 10$^{18}$ cm$^{-3}$. The influence of pH of the medium on the rate of introduction of hydrogen into the material is discussed.

Received: 18.08.2010
Accepted: 25.08.2010

 English version: Semiconductors, 2011, 45:3, 397–402

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