This article is cited in 10 papers

Manufacturing, processing, testing of materials and structures

Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

A. A. Altukhov^a, A. L. Vikharev^b, A. M. Gorbachev^b, M. P. Duhnovskii^c, V. E. Zemlyakov^c, K. N. Ziablyuk^a, A. V. Mitenkin^a, A. B. Muchnikov^b, D. B. Radishev^b, A. K. Ratnikova^c, Yu. Yu. Fedorov<sup>c

a</sup> ITC UralAlmazInvest, Moscow
^b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
^c Research and Production Corporation "Istok" named after Shokin, Fryazino, Moskovskaya obl.

Abstract: The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm$^2$ V$^{-1}$ s$^{-1}$ (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given.

Received: 14.07.2010
Accepted: 25.08.2010

 English version: Semiconductors, 2011, 45:3, 392–396

Bibliographic databases:

•