M. V. Yakushev, D. V. Brunev, V. S. Varavin, V. V. Vasilyev, S. A. Dvoretskii, I. V. Marchishin, A. V. Predein, I. V. Sabinina, Yu. G. Sidorov, A. V. Sorochkin, “HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 3,Pages <nobr>396

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Semiconductor physics

HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays

M. V. Yakushev, D. V. Brunev, V. S. Varavin, V. V. Vasilyev, S. A. Dvoretskii, I. V. Marchishin, A. V. Predein, I. V. Sabinina, Yu. G. Sidorov, A. V. Sorochkin

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Results of studies of the molecular beam epitaxial growth of HgCdTe alloys on Si substrates as large as 100 mm in diameter are presented. Optimum conditions for obtaining HgCdTe/Si(310) heterostructures of the device quality for the spectral range of 3–5 $\mu$m are determined. The results of measurements and discussion of photoelectric parameters of an infrared photodetector of a format of 320 $\times$ 256 elements with a step of 30 $\mu$m based on a hybrid assembly of a matrix photosensitive cell with a Si multiplexer are presented. A high stability of photodetector parameters to thermocycling from room temperature to liquid-nitrogen temperature is shown.

Received: 05.08.2010
Accepted: 26.08.2010