This article is cited in 6 papers

Semiconductor physics

Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector

N. V. Tkach, J. A. Seti

Chernivtsi National University named after Yuriy Fedkovych

Abstract: On the basis of a model of rectangular potentials and different electron effective masses in wells and barriers of an open resonant-tunneling structure with identical outer barriers, a theory has been developed and the dynamic conductance caused by the interaction of the electromagnetic field with electrons passing through the structure has been calculated. Using the example of the three-barrier resonant-tunneling structure with In$_{0.53}$Ga$_{0.47}$As wells and In$_{0.52}$Al$_{0.48}$As barriers, it is shown that, independently of the geometrical sizes of potential wells and barriers, there exist three geometrical configurations (positions of the inner barrier with respect to outer ones) at which the nanosystem, as an active element, provides optimum operating conditions of the quantum cascade detector.

Received: 14.07.2010
Accepted: 26.07.2010

 English version: Semiconductors, 2011, 45:3, 376–384

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