This article is cited in 14 papers

Micro- and nanocrystalline, porous, composite semiconductors

Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

A. V. Vasin^a, P. N. Okholin^a, I. N. Verovsky^a, A. N. Nazarov^a, V. S. Lysenko^a, K. I. Kholostov^b, V. P. Bondarenko^b, Y. Ishikawa<sup>c

a</sup> Institute of Semiconductor Physics NAS, Kiev
^b Belarussian State University of Computer Science and Radioelectronic Engineering
^c Japan Fine Ceramics Center, 456-8587 Nagoya, Japan

Abstract: Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 $\Omega$ cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550$^\circ$C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.

Received: 05.08.2010
Accepted: 25.08.2010

 English version: Semiconductors, 2011, 45:3, 350–354

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