This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Silicon-on-insulator structures with a nitrogenated buried SiO$_2$ layer: Preparation and properties

I. E. Tyschenko, V. P. Popov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Electrical properties of silicon-on-insulator (SOI) structures with buried SiO$_2$ layer implanted with nitrogen ions are studied in relation to the dose and energy of N$^+$ ions. It is shown that implantation of nitrogen ions with doses $>$ 3 $\times$ 10$^{15}$ cm$^{-2}$ and an energy of 40 keV brings about a decrease in the fixed positive charge in the oxide and a decrease in the density of surface stares by a factor of 2. An enhancement of the effect can be attained by lowering the energy of nitrogen ions. The obtained results are accounted for by interaction of nitrogen atoms with excess silicon atoms near the Si/SiO$_2$ interface; by removal of Si–Si bonds, which are traps of positive charges; and by saturation of dangling bonds at the bonding interface of the SOI structure.

Received: 02.08.2010
Accepted: 25.08.2010

 English version: Semiconductors, 2011, 45:3, 325–332

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