Semiconductor structures, low-dimensional systems, quantum phenomena

Photoreflectance spectroscopy of electron-hole states in a graded-width GaAs/InGaAs/GaAs quantum well

L. P. Avakyants^a, P. Yu. Bokov^a, E. V. Glazyrin^b, I. P. Kazakov^b, A. V. Chervyakov<sup>a

a</sup> Lomonosov Moscow State University, Faculty of Physics
^b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The spectrum of electron-hole states in a GaAs/In$_{0.5}$Ga$_{0.5}$As quantum well with a width graded in the range from 1.1 to 3.6 nm is studied by photoreflectance spectroscopy. The energies of the size-quantization levels of electrons and holes are calculated taking into account the strain-induced changes in the band structures of the quantum well. It is shown that the best fit of the experimental data to the results of calculations is attained if the ratio between the offset of the conduction band and that of the valence band at the heterojunction is $Q=\Delta E_c/\Delta E_v$ = 0.62/0.38. A photoreflectance signal is detected in the region of the shadow of modulating radiation beam at a spacing between the spots produced by probing and modulating radiation shorter than 6 mm.

Received: 21.07.2010
Accepted: 25.08.2010

 English version: Semiconductors, 2011, 45:3, 320–324

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