This article is cited in 4 papers

Surface, interfaces, thin films

Raman scattering in self-formed nanoporous carbon produced on the basis of silicon carbide

M. E. Kompan, D. S. Krylov, V. V. Sokolov

Ioffe Institute, St. Petersburg

Abstract: The Raman spectra of nanoporous carbon materials produced from silicon carbide are studied. The experimental data considered in comparison with the data obtained from other types of measurements are used to analyze the processes of self-formation of the material. Changes in the Raman spectra are observed in the material subjected to extra treatment with hydrogen. The effect is interpreted as a result of transformation of graphene-like carbon clusters into hydrocarbon derivatives, graphenes.

Received: 20.07.2010
Accepted: 30.07.2010

 English version: Semiconductors, 2011, 45:3, 306–311

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