This article is cited in 1 paper

Electronic properties of semiconductors

Effect of temperature on electron spectra in the region of the intrinsic-absorption edge of CdGa$_2$Se$_4$

T. G. Kerimova, R. A. Guliev

Institute of Physics Azerbaijan Academy of Sciences

Abstract: The results of investigation of the temperature dependence of CdGa$_2$Se$_4$ absorption coefficient in the polarized radiation at 5–300 K and that of the emission intensity at 4.2–77 K are presented. The changes observed for the polarization dependence of absorption coefficient and the radiation intensity with decreasing temperature are attributed to a different velocity of motion of states of the valence-band top $\Gamma_3+\Gamma_4$ and $\Gamma_2$ with changing tetragonal compression.

Received: 19.08.2010
Accepted: 14.09.2010

 English version: Semiconductors, 2011, 45:3, 292–294

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